advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v lower on-resistance r ds(on) 4m fast switching characteristic i d 80a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 40 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice thermal data parameter storage temperature range -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.71 pulsed drain current 1 320 total power dissipation 89 continuous drain current 3 80 continuous drain current 50 rating drain-source voltage 30 gate-source voltage + 20 200901123 1 ap92t03gs/p rohs-compliant product maximum thermal resistance, junction-ambient (pcb mount) 4 parameter g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP92T03GP) are available for low-profile applications. g d s to-263(s) g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =40a - - 4 m ? ?
ap92t03gs/ p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 40 80 120 160 200 240 280 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0 v 5.0 v 4.5 v v g = 3.0 v 0 40 80 120 160 200 240 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g = 3 .0v t c = 150 o c 2 4 6 8 10 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2.0 3.0 4.0 5.0 6.0 0 20406080100 i d , drain current (a) r ds(on) (m ?
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap92t03gs/p 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =12v v ds =16v v ds =20v i d =40a q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0 40 80 120 160 200 240 280 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.60 3.10 3.60 l4 14.70 15.50 16.00 l5 6.30 6.50 6.70 3.50 3.70 3.90 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 symbols advanced power electronics corp. e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 92t03gp ywwsss logo l5 meet rohs requirement for low voltage mosfet only e1 5
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 d1 d2 e 9.70 10.10 10.50 e1 e2 e3 e 2.04 2.54 3.04 l1 l2 l3 4.50 4.90 5.30 l4 meet rohs requirement for low voltage mosfet only
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